dimensions in inches and (millimeters) 0.000 (0.00) 0.012 (0.30) 0.013 (0.35) 0.004 (0.10) 0.018 (0.45) 0.006 (0.15) 0.045 (1.15) 0.033 (0.85) 0.036 (0.91) 0.024 (0.61) 0.016 (0.40) 0.032 (0.80) 0.053 (1.35) 0.041 (1.05) 0.012 (0.30) ref 0.105 (2.67) 0.025 (0.635) 0.100 (2.54) 0.030 (0.762) 0.050 (1.27) cathode band 0.142 (3.61) 0.126 (3.19) 0.158 (4.00) 0.146 (3.70) 0.086 (2.18) 0.074 (1.88) 0.087 (2.20) 0.103 (2.60) cas style smp features ? ery low profile - typical height of 1.0mm ?for surface mount application ?glass passivated chip junction ?ultrafast recovery times for high efficiency ?low forward voltage, low power loss high operation temperature up to 175? ?built-in strain relief, ideal for automated placement ?high temperature soldering guaranteed: 260?/10 seconds at terminals meets msl level 1 per j-std-020c mechanical data case: smp t erminals: matte tin plated (e3 suffix) leads, solderable per j-std-002b and mil-std-750, method 2026 polarity: color band denotes cathode end w eight: 0.0009 oz., 0.024g epoxy meets ul 94v-0 flammability rating ESH1PA thru esh1pd v ishay semiconductors formerly general semiconductor high current density surface mount ultrafast rectifiers reverse voltage 50 to 200 v forward current 1.0 a reverse recovery time 25ns document number 88895 www.vishay.com 23-sep-04 1 new product mounting pad layout maximum ratings & thermal characteristics (t a = 25? unless otherwise noted.) parameter symbol ESH1PA esh1pb esh1pc esh1pd unit device marking code pa pb pc pd maximum reverse voltage v rm 50 100 150 200 v maximum average forward rectified current fig.1 i f(av) 1.0 a peak forward surge current 10ms single half sine-wave superimposed on rated load i fsm 50 a t ypical thermal resistance (1) r ja 105 r jl 15 ?/w r jc 20 operating junction and storage temperature range t j , t stg 55 to +175 ? electrical characteristics (t a = 25? unless otherwise noted.) parameter symbol value unit maximum instantaneous forward voltage (2) at i f =0.7a, t j =25? v f 0.86 v at i f =1a, t j =25 ? 0.90 maximum reverse current t j = 25? 1.0 ? at rated vrm (2) t j =125? i r 25 maximum reverse current at v r = 20v, t j =150? i r 50 a maximum reverse recovery time at i f =0.5a, i r =1a, i rr =0.25a trr 25 ns t ypical reverse recovery time at t j =25? 25 at i f = 1.0a, v r = 30v di/dt = 50a/ s, i rr = 10% irm t j =100? trr 35 ns t ypical reverse recovery time at t j =25? 10 at i f = 1.0a, v r = 30v di/dt = 50a/ s, i rr = 10% irm t j =100? qrr 15 nc t ypical junction capacitance at 4.0v, 1mhz c j 25 pf notes : (1) thermal resistance from junction to ambient and junction to lead mounted on p.c.b. with 5.0 x 5.0mm copper pad areas. r jl is measured at the terminal of cathode band. r jc is measured at the top centre of the body (2) pulse test: 300 s pulse width, 1% duty cycle
ESH1PA thru esh1pd v ishay semiconductors formerly general semiconductor ratings and characteristic curves (t a = 25? unless otherwise noted) www.vishay.com document number 88895 2 23-sep-04 fig. 2 ?maximum non-repetitive peak forward surge current peak forward surge current (a) number of cycles at 50 h z 0 1.2 95 105 115 125 135 145 155 165 fig. 1 ?forward current derating curve a verage forward rectified current (a) lead temperature ( c) 0.4 0.6 0.8 1.2 1.4 instantaneous forward voltage (v) fig. 3 ?typical instantaneous forward characteristics 0.01 1 10 100 fig. 4 ?typical reverse leakage characteristics instantaneous reverse current ( a) percent of rated peak reverse voltage (%) 0.8 1.0 0.2 0.4 0.6 20 40 60 80 100 0.1 1 10 100 0.1 10 1 100 instantaneous forward current (a) reverse voltage (v) junction capacitance (pf) 1 10 100 fig. 5 ?typical junction capacitance t, pulse duration (sec.) t ransient thermal impedance ( c/w) fig. 6 ?typical transient thermal impedance 1 10 100 10 20 30 0 0.1 1 10 100 1 100 0.1 1000 10 30 50 70 90 0.01 1.0 0.01 0.2 1000 10 175 1.6 1000 40 50 t j = 175 c t j = 25 c t j = 125 c t j = 25 c t j = 125 c t j = 150 c t l measured at the cathode band terminal t j = 150 c t j = 175 c
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